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  nte5700 thru NTE5705 industrial power module description: the nte5700 through NTE5705 series of integrated power circuits consist of power thyristors and power diodes configured in a single package. applications include power supplies, control circuits and battery chargers. features: d glass passivated junctions for greater reliability d electrically isolated base plate d high dynamic characteristics absolute maximum ratings: maximum repetitive peak reverse voltage (v s  0), v rrm 1200v ............................ maximum non--repetitive peak reverse voltage, v rsm 1300v ............................... maximum repetitive peak off state voltage gate open circuit, v drm 1200v .................. thermal and mechanical characteristics: junction operating temperature range, t j -- 4 0  to +125  c .................................. storage temperature range, t stg -- 4 0  to +150  c .......................................... maximum internal thermal resistance, one junction to case, r thjc dc operation 2.24k/w ............................................................ maximum thermal resistance, base to heatsink, r thcs mounting surface smooth and greased 0.10k/w ..................................... mounting torque, base to heatsink  10% (note 1), t 5nm .................................. approximate weight, wt 58g (2.0oz) ...................................................... note 1. a mounting compound is recommended and the torque should be checked after a period of about 3 hours to allow for the spread of the compound.
electrical characteristics: parameter symbol test conditions rating unit forward conduction maximum dc output current i o t c =+85  c, full bridge circuits (nte5700, nte5701, nte5702) 25 a maximum average on--state and forward current i t(av) i f(av) 180  sine wave conduction circuits (all types) 12.5 a maximum rms current i rms 180  sine wave conduction circuit (nte5702) 28 a maximum peak, one--cycle n r t i t i o s t t i tsm 10ms 100% v rrm r l i d sinusoidal half wave, i i t i l t t m 300 a non--repetitive on--state o r f o r w a r d c u r r e n t or i f s m 8.3ms reapplied initial t j =t j max 315 a o r f o r w a r d c u r r e n t i f s m 10ms no voltage r l i d 357 a 8.3ms reapplied 375 a maximum i 2 t for fusing i 2 t 10ms 100% v rrm r l i d initial t j =t j max 450 a 2 s 8.3ms reapplied 410 a 2 s 10ms no voltage r l i d 637 a 2 s 8.3ms reapplied 580 a 2 s maximum i 2  t for fusing i 2  t t = 0.1 to 10ms, no voltage reapplied, note 2 6365 a 2  s maximum value of threshold voltage v t(to) t j = +125  c 0.82 v maximum value of on--state slope resistance r t t j = +125  c 12 m  maximum peak on--state f d v l t v tm i tm =  xi t(av) t j =+25  c, 1 8 0  c d i t i 1.35 v or forward voltage v fm i fm =  xi f(av) 180  condition 1.35 v maximum non--repetitive rate of rise of turned on circuit di/dt t j = +125  c, from 0.67v drm ,i tm =  xi t(av) , i g = 500ma, t r <0.5  s, t p >6  s 200 a/  s maximum holding current i h t j =+25  c, anode supply = 6v, resistive load, gate open circuit 100 ma maximum latching current i l t j =+25  c, anode supply = 6v, resistive load 250 ma triggering maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 w maximum peak gate current i gm 2.0 a maximum peak negative gate voltage -- v gm 10 v maximum gate voltage required t t i v gt t j =--40  c anode supply = 6v r i t i l d 3.0 v to trigger t j =+25  c resistive load 2.0 v t j = +125  c 1.0 v
electrical characteristics (cont?d): parameter symbol test conditions rating unit triggering (cont?d) maximum gate current required t t i i gt t j =--40  c anode supply = 6v r i t i l d 90 ma to trigger t j =+25  c resistive load 60 ma t j = +125  c 35 ma maximum gate voltage that will not trigger v gd t j = +125  c, rated v drm applied 0.2 v blocking maximum critical rate of rise of off--state voltage dv/ dt t j = +125  c, exponential to 0.67v drm , gate open circuit 200 v/  s maximum peak reverse and o f f - - s t a t e l e a k a g e c u r r e n t i rm t j =t j max, gate open circuit 10 ma o f f -- s t a t e l ea k age c urren t at v rrm ,v drm i dm 2.0 ma rms isolation voltage v ins 50hz, circuit to base, all terminals shorted 2500 v note 2. i 2 tfortimet x =i 2  t  t x . pin connection and schematic diagrams: nte no. description terminal positions schematic diagrams 5700 single phase, hybrid bridge, common cathode, freewheeling diode 5701 single phase, hybrid bridge, common anode, freewheeling diode 5702 single phase, all scr bridge * for transient protection, a metal oxide varistor (mov) may be connected externally across terminals ac1 & ac2. ac1 ac2 g1 g2 (--) (+) ac1 ac2 * g1 g2 (--) (+) ac1 ac2 g1 g2 (--) (+) ac1 ac2 * g1 g2 (--) (+) ac2 ac1 g2 g3 (--) (+) g1 g4 ac1 ac2 * g1 g3 g2 g4 (--) (+)
pin connection and schematic diagrams (cont?d): nte no. description terminal positions schematic diagrams 5703 scracswitch 5704 hybrid doubler 5705 scr doubler * for transient protection, a metal oxide varistor (mov) may be connected externally across terminals ac1 & ac2. 1.910 (48.5) .200 (5.08) 1.250 (31.75) 2.500 (63.5) .980 (24.89) max .600 (15.24) max .500 (12.7) note: can be used with heat sink nte441a ac1 g2 g1 ac2 * g2 g1 ac1 ac2 ac1 g1 (--) (+) g1 ac1 (--) (+) ac g1 g2 (--) (+) g2 ac1 (--) (+) g1


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